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CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 1/6
MTN2002ZS3
Description
* Low voltage drive, 1.8V * Easy to use in parallel * High speed switching * ESD protected device * Pb-free package
BVDSS ID RDSON
20V 100mA 3
Symbol
MTN2002ZS3
Outline
SOT-323 D
GGate SSource DDrain
G
S
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25C) Total Power Dissipation (Ta=25C) Total Power Dissipation (Tc=25C) ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Lead Temperature, for 10 second Soldering
Note : *1. Pulse Width 300s, Duty cycle 2% *2. Human body model, 1.5k in series with 100pF
MTN2002ZS3 CYStek Product Specification
Symbol BVDSS
VGS ID IDM PD Tj Rth,ja Rth,jc TL
Limits 20 8 100 400 *1 200 400 350 *2 -55~+150 625 250 260
Unit V V mA mA mW V C C/W C/W C
CYStech Electronics Corp.
Electrical Characteristics (Ta=25C)
Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 3.5 Max. 1.0 1 500 3 6 50 25 5 1 Unit V V A nA mS
Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 2/6
Test Conditions VGS=0, ID=100A VDS=VGS, ID=250A VGS=8V, VDS=0 VDS=20V, VGS=0 VGS=4.5V, ID=100mA VGS=1.8V, ID=20mA VDS=5V, ID=100mA
GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD -
pF
VDS=10V, VGS=0, f=1MHz
V
VGS=0V, IS=10mA
*Pulse Test : Pulse Width 300s, Duty Cycle2%
Ordering Information
Device MTN2002ZS3 Package SOT-323 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 22
Characteristic Curves
Typical Output Characteristics
0.7 0.6 Drain Current - ID(A) 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 2.0V 1.8V VGS=1.5V 5V 4.5V
Typical Transfer Characteristics
0.8 0.7 Drain Current -ID(A) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 Gate-Source Voltage-VGS(V) 5 6
4.0V 3.5V 3V 2.5V VDS=3V
MTN2002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Static Drain-Source On-State resistance vs Drain Current
Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 3/6
Static Drain-Source On-State Resistance vs Gate-Source Voltage
10 Static Drain-Source On-State Resistance-RDS(on)()
Static Drain-Source On-State Resistance-RDS(ON)()
7 6 5 4 3 2 1 0
ID=20mA ID=100mA
VGS=1.8V
VGS=4.5V
1 0.001
0.01 0.1 Drain Current-ID(A)
1
0
2
4 6 8 Gate-Source Voltage-VGS(V)
10
Reverse Drain Current vs Source-Drain Voltage 1 Source-Drain Voltage-VSD(V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 Reverse Drain Current -IDR(A)
Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA() 200 Power Dissipation---PD(mW) 450 400 350 300 250 200 150 100 50 0 0
Capacitance vs Drain-to-Source Voltage
100
Ciss
Capacitance---(pF)
C oss
10
Crss
1 0.4 0.1 1 10 Drain-Source Voltage -VDS(V)
Power Derating Curve
100
50
100
150
200
Case Temperature---TC()
MTN2002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 4/6
Carrier Tape Dimension
MTN2002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 5/6
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Note : All temperatures refer to topside of the package, measured on the package body surface.
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
MTN2002ZS3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
3
A
Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2009.06.03 Page No. : 6/6
Marking:
A1 Q Lp
detail Z W B
C
1 e1 e D bp
2
TE 22
E
A
Z
He
0 1 scale 2 mm
v
A
3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
DIM A A1 bp C D E e
Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 -
Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 -
DIM e1 He Lp Q v w
Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 -
Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2002ZS3
CYStek Product Specification

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